mbr870l thru 8100l maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inducti ve load. for capacitive load, derate current by 20% features metal of silicon rectifier,majority carrier conduct on guard ring for transient protection low power loss, high efficiency high current capability, low vf high surge capacity plastic package has ul flammability classification 94v-0 for use in low voltage,high frequency inverters,fre e whelling,and polarity protection applications mechanical data case : to-220ac molded plastic polarity : as marked on the body weight : 0.08 ounces, 2.24 grams mounting position : any max. mounting torque = 0.5 n.m (5.1 kgf.cm) 8 230 -55 to +150 0.55 7 280 10000 0.72 0.58 mbr870l 70 49 70 mbr880l 80 56 80 mbr890l 90 63 90 MBR8100L 100 70 100 to-220ac all dimensions in millimeter to-220ac dim. min. max. a c d ef g h b 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 5.33 n m l k j i 1.14 4.83 0.64 0.30 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 a b c k j i g f e d n m l h pin 1 pin 2 case pin 1 2 schottky barrier rectifiers reverse voltage - 70 to 100 volts forward current - 8.0 amperes notes : 1. 300us pulse width, 2% duty cycle. 2. measured at 1.0mhz and applied re verse voltage of 4.0v dc. 3. thermal resistance junction to ca se. v rms v dc v rrm i (av) i fsm peak forward surge current 8.3ms single half sine-wave superimposed on rated load maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage t j operating temperature range c t stg storage temperature range c i r @t j =125 c maximum dc reverse current at rated dc blocking voltage @t j =25 c ma a a v unit v v characteristics symbol typical thermal resistance (note 3) c/w r 0jc voltage rate of change (rated vr) dv/dt v/us v f maximum forward voltage (note 1) v t j =25 c t j =125 c i f =8a @ i f =8a @ maximum average forward rectified current at t c =125 c (see fig.1) typical junction capacitance (note 2) c j pf -55 to +175 2.0 semiconductor lite-on rev. 4, aug-2007, ktha06
rating and characteristic curves mbr870l thru MBR8100L instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0.5 0.6 0.1 1.0 0.9 pulse width 300ua instantaneous forward voltage , volts instantaneous forward current ,(a) 0.1 1.0 10 100 0.1 pulse width 300us 2% duty cycle t j = 25 c percent of rated peak reverse voltage ,(%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0 0.01 1.0 10 1000 100 60 80 100 t j = 125 c 0.1 t j = 25 c t j = 75 c fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 10000 1000 100 0.1 4 fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 0 50 100 150 200 250 300 fig.1 - forward current derating curve average forward current amperes 25 75 100 125 150 2 0 50 8 175 case temperature , c 8.3ms single half-sine-wave 6 0 4 resistive or inductive load 10 t j = 25 c, f= 1mhz rev. 3, 13-sep-2001, ktha06
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